Geometrical prediction of maximum power point for photovoltaics
Identifieur interne : 000120 ( Main/Repository ); précédent : 000119; suivant : 000121Geometrical prediction of maximum power point for photovoltaics
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Abstract
It is important to drive solar photovoltaic (PV) system to its utmost capacity using maximum power point (MPP) tracking algorithms. This paper presents a direct MPP prediction method for a PV system considering the geometry of the I-V characteristic of a solar cell and a module. In the first step, known as parallelogram exploration (PGE), the MPP is determined from a parallelogram constructed using the open circuit (OC) and the short circuit (SC) points of the I-V characteristic and Lagrangian interpolation. In the second step, accurate values of voltage and power at the MPP, defined as Vmp and Pmp respectively, are decided by the Lagrangian interpolation formula, known as the Lagrangian interpolation exploration (LIE). Specifically, this method works with a few (V, I) data points instead most of the MPP algorithms work with (P, V) data points. The performance of the method is examined by several PV technologies including silicon, copper indium gallium selenide (CIGS), copper zinc tin sulphide selenide (CZrSSe), organic, dye sensitized solar cell (DSSC) and organic tandem cells' data previously reported in literatures. The effectiveness of the method is tested experimentally for a few silicon cells' I-V characteristics considering variation in the light intensity and the temperature. At last, the method is also employed for a 10 W silicon module tested in the field. To testify the preciseness of the method, an absolute value of the derivative of power (P) with respect to voltage (V) defined as (dP/dV) is evaluated and plotted against V. The method estimates the MPP parameters with high accuracy for any kind of PV technologies with different environmental conditions. In future, this method proposes a guide line to construct control scheme for real-time MPPT tracking in the PV system.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Geometrical prediction of maximum power point for photovoltaics</title><author><name sortKey="Kumar, Gaurav" uniqKey="Kumar G">Gaurav Kumar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department, S.V. National Institute of Technology</s1><s2>Surat 395007, Gujarat</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Surat 395007, Gujarat</wicri:noRegion></affiliation></author><author><name sortKey="Panchal, Ashish K" uniqKey="Panchal A">Ashish K. Panchal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department, S.V. National Institute of Technology</s1><s2>Surat 395007, Gujarat</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Surat 395007, Gujarat</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0072207</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0072207 INIST</idno><idno type="RBID">Pascal:14-0072207</idno><idno type="wicri:Area/Main/Corpus">000125</idno><idno type="wicri:Area/Main/Repository">000120</idno></publicationStmt><seriesStmt><idno type="ISSN">0306-2619</idno><title level="j" type="abbreviated">Appl. energy</title><title level="j" type="main">Applied energy</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric power production</term><term>Interpolation</term><term>Photovoltaic cell</term><term>Photovoltaic system</term><term>Solar energy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif photovoltaïque</term><term>Production énergie électrique</term><term>Système photovoltaïque</term><term>Energie solaire</term><term>Interpolation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">It is important to drive solar photovoltaic (PV) system to its utmost capacity using maximum power point (MPP) tracking algorithms. This paper presents a direct MPP prediction method for a PV system considering the geometry of the I-V characteristic of a solar cell and a module. In the first step, known as parallelogram exploration (PGE), the MPP is determined from a parallelogram constructed using the open circuit (OC) and the short circuit (SC) points of the I-V characteristic and Lagrangian interpolation. In the second step, accurate values of voltage and power at the MPP, defined as V<sub>mp</sub> and P<sub>mp</sub> respectively, are decided by the Lagrangian interpolation formula, known as the Lagrangian interpolation exploration (LIE). Specifically, this method works with a few (V, I) data points instead most of the MPP algorithms work with (P, V) data points. The performance of the method is examined by several PV technologies including silicon, copper indium gallium selenide (CIGS), copper zinc tin sulphide selenide (CZrSSe), organic, dye sensitized solar cell (DSSC) and organic tandem cells' data previously reported in literatures. The effectiveness of the method is tested experimentally for a few silicon cells'<sup> </sup>I-V characteristics considering variation in the light intensity and the temperature. At last, the method is also employed for a 10 W silicon module tested in the field. To testify the preciseness of the method, an absolute value of the derivative of power (P) with respect to voltage (V) defined as (dP/dV) is evaluated and plotted against V. The method estimates the MPP parameters with high accuracy for any kind of PV technologies with different environmental conditions. In future, this method proposes a guide line to construct control scheme for real-time MPPT tracking in the PV system.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0306-2619</s0></fA01><fA02 i1="01"><s0>APENDX</s0></fA02><fA03 i2="1"><s0>Appl. energy</s0></fA03><fA05><s2>119</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Geometrical prediction of maximum power point for photovoltaics</s1></fA08><fA11 i1="01" i2="1"><s1>KUMAR (Gaurav)</s1></fA11><fA11 i1="02" i2="1"><s1>PANCHAL (Ashish K.)</s1></fA11><fA14 i1="01"><s1>Electrical Engineering Department, S.V. National Institute of Technology</s1><s2>Surat 395007, Gujarat</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>237-245</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>17162</s2><s5>354000505777750220</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0072207</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied energy</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>It is important to drive solar photovoltaic (PV) system to its utmost capacity using maximum power point (MPP) tracking algorithms. This paper presents a direct MPP prediction method for a PV system considering the geometry of the I-V characteristic of a solar cell and a module. In the first step, known as parallelogram exploration (PGE), the MPP is determined from a parallelogram constructed using the open circuit (OC) and the short circuit (SC) points of the I-V characteristic and Lagrangian interpolation. In the second step, accurate values of voltage and power at the MPP, defined as V<sub>mp</sub> and P<sub>mp</sub> respectively, are decided by the Lagrangian interpolation formula, known as the Lagrangian interpolation exploration (LIE). Specifically, this method works with a few (V, I) data points instead most of the MPP algorithms work with (P, V) data points. The performance of the method is examined by several PV technologies including silicon, copper indium gallium selenide (CIGS), copper zinc tin sulphide selenide (CZrSSe), organic, dye sensitized solar cell (DSSC) and organic tandem cells' data previously reported in literatures. The effectiveness of the method is tested experimentally for a few silicon cells'<sup> </sup>I-V characteristics considering variation in the light intensity and the temperature. At last, the method is also employed for a 10 W silicon module tested in the field. To testify the preciseness of the method, an absolute value of the derivative of power (P) with respect to voltage (V) defined as (dP/dV) is evaluated and plotted against V. The method estimates the MPP parameters with high accuracy for any kind of PV technologies with different environmental conditions. 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